News Releases

Mitsubishi Electric to Launch N-series 1200V SiC-MOSFETLow power consumption and miniaturization of power-supply systems, such as EV on-board chargers and photovoltaic power systems


TOKYO, June 16, 2020 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance1 to self-turn-on. The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.

Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.

  1. 1Input capacitance/mirror capacitance (Ciss/Crss), as calculated by Mitsubishi Electric

N-series 1200V SiC-MOSFET

Product Features

  1. 1)Reduced power consumption and miniaturization of power-supply systems
    • Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading2 figure of merit (FOM3) of 1,450mΩ·nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.
    • By reducing mirror capacitance4, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realized and helps reduce switching loss.
    • Reduced switching-power loss enables the downsizing and simplification of cooling systems as well as the downsizing of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency5, thereby helping to reduce the cost and size of overall power-supply systems.
    1. 2As of June 16, 2020 according to Mitsubishi Electric research
    2. 3Performance index of Power MOSFET, calculated by multiplying the on-resistance by the gate-drain charge (100°C junction temperature). Smaller values indicate better performance
    3. 4Stray capacitance between Gate and Drain existing in MOSFET structure (Crss)
    4. 5Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
  2. 2)Six models for various applications including AEC-Q101 compliant models
    • The product lineup includes models which are qualified with Automotive Electronics Council's AEC-Q101 standards. Therefore, the N-series SiC-MOSFET can be used not only in industrial applications such as photovoltaic systems, it can also be used in EV on-board chargers.

Sales Schedule

Product Standards Model VDS RDS(on)_typ. IDmax@25°C Package Sample
SiC-MOSFET AEC-Q101 BM080N120SJ 1200V 80mΩ 38A TO-247-3 July 2020
BM040N120SJ 40mΩ 68A
BM022N120SJ 22mΩ 102A
BM080N120S 80mΩ 38A
BM040N120S 40mΩ 68A
BM022N120S 22mΩ 102A


Note that the press releases are accurate at the time of publication but may be subject to change without notice.


Media contact

Customer Inquiries